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2N2906 Datasheet - TT

2N2906 SILICON PLANAR EPITAXIAL PNP TRANSISTOR

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 Low Power Hermetic TO-18 Metal package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Voltage -40V VEBO Emitter Base Voltage -5V IC Continuous Collector Current -600mA PD Total Power Dissipation at.

2N2906-TT.pdf

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Datasheet Details

Part number:

2N2906

Manufacturer:

TT

File Size:

229.78 KB

Description:

Silicon planar epitaxial pnp transistor.

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2N2906 2N2906 SILICON PLANAR EPITAXIAL PNP TRANSISTOR TT

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