2N2906 SILICON PLANAR EPITAXIAL PNP TRANSISTOR

Description

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 * Low Power * Hermetic TO-18 Metal package.* Ideally suited for High Speed Sw.

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Datasheet Specifications

Part number: 2N2906
Manufacturer: TT
File Size: 229.78 KB
Datasheet: 2N2906-TT.pdf
Description: SILICON PLANAR EPITAXIAL PNP TRANSISTOR

Applications

* Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector
* Base Voltage -60V VCEO Collector
* Emitter Voltage -40V VEBO Emitter
* Base Voltage -5V IC Continuous Collector Current -600mA PD Total Power Dissi

2N2906 Distributors

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2N2906 SILICON PLANAR EPITAXIAL PNP TRANSISTOR TT

TT 2N2906-like datasheet