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2N2906 - SILICON PLANAR EPITAXIAL PNP TRANSISTOR

2N2906 Description

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 * Low Power * Hermetic TO-18 Metal package.* Ideally suited for High Speed Sw.

2N2906 Applications

* Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector
* Base Voltage -60V VCEO Collector
* Emitter Voltage -40V VEBO Emitter
* Base Voltage -5V IC Continuous Collector Current -600mA PD Total Power Dissi

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Datasheet Details

Part number
2N2906
Manufacturer
TT
File Size
229.78 KB
Datasheet
2N2906-TT.pdf
Description
SILICON PLANAR EPITAXIAL PNP TRANSISTOR

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SILICON PLANAR EPITAXIAL PNP TRANSISTOR TT
TT 2N2906-like datasheet