2N2906 Datasheet - TT

2N2906, SILICON PLANAR EPITAXIAL PNP TRANSISTOR

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 * Low Power * Hermetic TO-18 Metal package.* Ideally suited for High Speed Sw.

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2N2906-TT.pdf

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Datasheet Details

Part number:

2N2906

Manufacturer:

File Size:

229.78 KB

Description:

SILICON PLANAR EPITAXIAL PNP TRANSISTOR

Applications

* Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector
* Base Voltage -60V VCEO Collector
* Emitter Voltage -40V VEBO Emitter
* Base Voltage -5V IC Continuous Collector Current -600mA PD Total Power Dissi

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2N2906 SILICON PLANAR EPITAXIAL PNP TRANSISTOR TT

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