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TSM4N80 N-Channel Power MOSFET

TSM4N80 Description

TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 800 3 @ VGS =10V ID.
The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

TSM4N80 Features

* Low RDS(ON) 3Ω (Max. ) Low gate charge typical @ 25nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM4N80CZ C0 TSM4N80CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherw

TSM4N80 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: C13

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Datasheet Details

Part number
TSM4N80
Manufacturer
Taiwan Semiconductor
File Size
358.27 KB
Datasheet
TSM4N80-TaiwanSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM4N80-like datasheet