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TSM60N03 N-Channel Power MOSFET

TSM60N03 Description

TO-252 (DPAK) Pin Definition: 1.Gate 2.Drain 3.Source TSM60N03 30V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 4.5 @ VGS =1.
only.

TSM60N03 Features

* Advanced Trench Technology
* Low RDS(ON) 4.5mΩ (Max. )
* Low gate charge typical @ 12nC (Typ. )
* Low Crss typical @ 140pF (Typ. ) Ordering Information Part No. Package Packing TSM60N03CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-C

TSM60N03 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12

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Datasheet Details

Part number
TSM60N03
Manufacturer
Taiwan Semiconductor
File Size
263.64 KB
Datasheet
TSM60N03-TaiwanSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM60N03-like datasheet