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TSM60NB1R4CP N-Channel Power MOSFET

TSM60NB1R4CP Description

TSM60NB1R4CP Taiwan Semiconductor N-Channel Power MOSFET 600V, 3A, 1.4Ω .

TSM60NB1R4CP Features

* Super-Junction technology
* High performance due to small figure-of-merit
* High ruggedness performance
* High commutation performance
* 100% UIL tested
* Pb-free plating
* Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
* Halogen-free ac

TSM60NB1R4CP Applications

* Power Supply
* Lighting TO-252 (DPAK) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)

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Taiwan Semiconductor TSM60NB1R4CP-like datasheet