Datasheet4U Logo Datasheet4U.com

TSM4N60 600V N-Channel Power MOSFET

TSM4N60 Description

TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V.
The TSM4N60 is produced using advanced planar stripe, DMOS technology.

TSM4N60 Features

* Robust high voltage termination
* Avalanche energy specified
* Diode is characterized for use in bridge circuits
* Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. Package TSM4N60CZ C0 TO-220 TSM4N6

📥 Download Datasheet

Preview of TSM4N60 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TSM4N80 - N-Channel Power MOSFET (Taiwan Semiconductor)
  • TSM4N90 - N-Channel Power MOSFET (Taiwan Semiconductor)
  • TSM4NC50CP - N-Channel Power MOSFET (Taiwan Semiconductor)
  • TSM4NC60CI - N-Channel Power MOSFET (Taiwan Semiconductor)
  • TSM4 - Surface Mount Miniature Trimmers Multi-Turn Cermet (Vishay Siliconix)
  • TSM40N03PQ33 - N-Channel Power MOSFET (Taiwan Semiconductor)
  • TSM40N03PQ56 - N-Channel Power MOSFET (Taiwan Semiconductor)
  • TSM4424 - 20V N-Channel MOSFET (Taiwan Semiconductor)

📌 All Tags

600V N-Channel Power MOSFET Taiwan Semiconductor Company
Taiwan Semiconductor Company TSM4N60-like datasheet