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2SD2583 NPN Silicon Epitaxial Power Transistor

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Description

2SD2583 ® 2SD2583 Pb Pb Free Plating Product NPN Silicon Epitaxial Power Transistor .

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Datasheet Specifications

Part number
2SD2583
Manufacturer
Thinki Semiconductor
File Size
282.54 KB
Datasheet
2SD2583-ThinkiSemiconductor.pdf
Description
NPN Silicon Epitaxial Power Transistor

Features

* Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA)
* High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) ABSOLUTE MAXIMUM RATINGS Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage VCB0 30 V Collector to Emitter Volteage VCE0 30 V Emitte

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