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2SD2583

NPN Silicon Epitaxial Power Transistor

2SD2583 Features

* Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA)

* High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) ABSOLUTE MAXIMUM RATINGS Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage VCB0 30 V Collector to Emitter Volteage VCE0 30 V Emitte

2SD2583 Datasheet (282.54 KB)

Preview of 2SD2583 PDF

Datasheet Details

Part number:

2SD2583

Manufacturer:

Thinki Semiconductor

File Size:

282.54 KB

Description:

Npn silicon epitaxial power transistor.

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2SD2583 NPN Silicon Epitaxial Power Transistor Thinki Semiconductor

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