2SD2584 Datasheet - Toshiba Semiconductor

2SD2584 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type (darlington) 2SD2584 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SD2584 Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = .

2SD2584_ToshibaSemiconductor.pdf