2SD2580 Datasheet - Sanyo Semicon Device

2SD2580 NPN Triple Diffused Planar Silicon Transistor

2SD2580 Features

* High speed.

* High breakdown voltage (VCBO=1500V).

* High reliability (Adoption of HVP process).

* Adoption of MBIT process.

* On-chip damper diode. Package Dimensions unit:mm 2039D [2SD2580] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 2.8 2.0 4.0 2.0 20.4 1.0 0.6 1 2 3 2.0

Datasheet Details

2SD2580

Sanyo Semicon Device

43.94 KB

Npn triple diffused planar silicon transistor.

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