IRF630PBF Datasheet, Mosfet, Thinki Semiconductor

IRF630PBF Features

• Mosfet ̰ RDS(on) (Max 0.4 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1.Gate 2.Drain 3.Source BVDSS = 200V RDS(ON) = 0.4 o

PDF File Details

Part number:

IRF630PBF

Manufacturer:

Thinki Semiconductor

File Size:

0.99MB

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📄 Datasheet

Description:

N-channel type power mosfet. This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology inte

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IRF630PBF

Thinki Semiconductor

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