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IRF630PBF

N-Channel Type Power MOSFET

IRF630PBF Features

* ̰ RDS(on) (Max 0.4 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1.Gate 2.Drain 3.Source BVDSS = 200V RDS(ON) = 0.4 ohm ID = 9A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semicond

IRF630PBF General Description

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for.

IRF630PBF Datasheet (0.99 MB)

Preview of IRF630PBF PDF

Datasheet Details

Part number:

IRF630PBF

Manufacturer:

Thinki Semiconductor

File Size:

0.99 MB

Description:

N-channel type power mosfet.

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IRF630PBF N-Channel Type Power MOSFET Thinki Semiconductor

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