Datasheet Details
Part number:
IRF830PBF
Manufacturer:
Thinki Semiconductor
File Size:
1.18 MB
Description:
N-Channel Type Power MOSFET
IRF830PBF ® Pb Free Plating Product IRF830PBF Pb 5.0A,500V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate Charge (Typical 18.5nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1.
Gate { { 2.
Drain ̻ ඔ̵ ̻ ̻ { 3.
Source BVDSS = 500V
IRF830PBF-ThinkiSemiconductor.pdf
IRF830PBF, N-Channel Type Power MOSFET
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The TO-220C pkg is well suited for
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