2SA1242 Datasheet - Toshiba Semiconductor

2SA1242 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications 2SA1242 Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 70 (min) (VCE = 2 V, IC = 4 A) Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta.

2SA1242 Features

* ing or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export a

2SA1242_ToshibaSemiconductor.pdf