2SA1887 Datasheet - Toshiba Semiconductor

2SA1887 Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1887 High-Current Switching Applications 2SA1887 Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) at IC = 5 A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature ran.

2SA1887 Features

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2SA1887_ToshibaSemiconductor.pdf