* High Breakdown Voltage : VcEO=-100V : VcEO=-60V
* Various Uses for Medium Power (2S^,510) (2S/i512) zz pa45 I 1 M os Oi : I C=-1.5A (Max.), P c=800mW (Max.)
* Complementary to 2SC510 and 2SC512. MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC SYMBOL Collector-Base Voltag
2SA510
Toshiba ↗ Semiconductor
125.70 KB
Silicon pnp transistor.
:
2SA510
2SA512,
SILICON PIMP EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APP.
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:
2SA510
2SA512,
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HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APP.
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