2SA500 Datasheet PDF - Toshiba Silicon PNP Epitaxial Transistor Specs

2SA500 - Silicon PNP Epitaxial Transistor

This page provides the datasheet information for the 2SA500, a member of the 2SA499 Silicon PNP Epitaxial Transistor family.

Datasheet Summary

Features

High Breakdown Voltage : VcBO=-50V (Min. ) (2SA499) : VCBO=-30V (Min. ) (2SA500).
High Transition Frequency : f T=250MHz (Typ. ).
Fast Switching Speed : t on=25ns (Typ. ).
Complementary to 2SC400 and 2SC979.

Datasheet Details

Part number	2SA500
Manufacturer	Toshiba
File Size	117.56 KB
Description	Silicon PNP Epitaxial Transistor
Datasheet	2SA500 Datasheet
Additional preview pages of the 2SA500 datasheet.

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Full PDF Text Transcription

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II SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA499 2SA500 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES: • High Breakdown Voltage : VcBO=-50V (Min.) (2SA499) : VCBO=-30V (Min.) (2SA500) • High Transition Frequency : f T=250MHz (Typ.) • Fast Switching Speed : t on=25ns (Typ.) • Complementary to 2SC400 and 2SC979. INDUSTRIAL APPLICATIONS Unit in mm MZf4.95MAX 00.45 02.54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector- Emitter Voltage 2SA499 2SA500 2SA499 2SA500 Emitter- Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC l stg RATING -50 -30 -40 -20 -5 -100 -20 250 175 -65^175 UNIT mA mA mW JED EC L EMITTER 2.

Published: Jun 9, 2015 |