2SC2458L - Silicon NPN Transistor

Toshiba Semiconductor

Datasheet Details

Part number	2SC2458L
Manufacturer	Toshiba Semiconductor
File Size	174.99 KB
Description	Silicon NPN Transistor
Datasheet	2SC2458L Datasheet
Additional preview pages of the 2SC2458L datasheet.

📁 Similar Datasheet

2SC2458 - NPN Transistor (JCET)
2SC2458 - NPN Silicon Transistor (SEMTECH)
2SC2458 - NPN EPITAXIAL SILICON TRANSISTOR (FGX)
2SC2458 - NPN Silicon Transistor (Bluecolour)
2SC245 - SILICON POWER TRANSISTOR (SavantIC)
2SC245 - NPN Transistor (INCHANGE)
2SC2456 - Silicon NPN Transistor (Toshiba)
2SC2404 - Silicon NPN Transistor (Panasonic Semiconductor)
2SC2404 - Silicon PNP Transistor (Kexin)
2SC2404 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)

Other Datasheets by Toshiba Semiconductor

2SC2458 - Silicon NPN Transistor
2SC2459 - Silicon NPN Transistor
2SC2482 - NPN Transistor
2SC2498 - Silicon NPN epitaxial planer Transistor
2SC2036 - Silicon NPN Epitaxial Type Transistor
2SC2068 - Silicon NPN Triple Diffused Type Transistor
2SC2099 - TRANSISTOR
2SC2120 - TRANSISTOR

Full PDF Text Transcription

Click to expand full text

2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications Unit: mm · High current capability: IC = 150 mA (max) · High DC current gain: hFE = 70~700 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · Low noise: NF (2) = 0.2dB (typ.), 3dB (max) · Complementary to 2SA1048 (L). · Small package. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 50 200 125 -55~125 Unit V V V mA mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.

Published: Mar 22, 2005 |