2SC3303
Toshiba ↗ Semiconductor
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Silicon npn transistor.
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2SC3300 - NPN Transistor
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isc Silicon NPN Power Transistor
2SC3300
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage-
:.
2SC3300 - SILICON POWER TRANSISTOR
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SavantIC Semiconductor
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Product Specification
Silicon NPN Power Transistors
2SC3300
DESCRIPTION ·With TO-3PN package ·Low satur.
2SC3301 - Silicon NPN Transistor
(Toshiba)
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SILICON NPN EPITAXIAL PLANAR TYPE
2SC3301
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS.
FEATURES . NF=1.7dB, lS21el 2=14.5dB (f=500MHz) . NF=2.3d.
2SC3302 - Silicon NPN Transistor
(Toshiba Semiconductor)
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SILICON NPN EPITAXIAL PLANAR TYPE
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS.
FEATURES . NF=1.5dB, 1 S21el 2=16.5dB (f=500MHz)
. NF=1.7dB, IS 2 l.
2SC3303 - NPN Epitaxial Planar Silicon Transistor
(SeCoS)
Elektronische Bauelemente
2SC3303
5A , 100V NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead.
2SC3303 - Silicon NPN Transistor
(GME)
Silicon NPN Epitaxial Type
FEATURES
Low collector saturation voltage: VCE(sat)=0.4V(max)(IC=3A).
High speed switching time:tstg=1us(typ).
Pb
Lea.
2SC3303 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% aval.
2SC3306 - NPN Transistor
(Toshiba Semiconductor)
.
2SC3306 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3306
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High S.
2SC3306 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
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Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3P(I) package ·Collector-emitter.
