Datasheet4U Logo Datasheet4U.com

2SC3710A Datasheet - Toshiba Semiconductor

2SC3710A Silicon NPN Transistor

www.DataSheet4U.com 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SA1452A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction tem.

2SC3710A_ToshibaSemiconductor.pdf

Preview of 2SC3710A PDF
2SC3710A Datasheet Preview Page 2 2SC3710A Datasheet Preview Page 3

Datasheet Details

Part number:

2SC3710A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

170.23 KB

Description:

Silicon npn transistor.

2SC3710A Distributor

📁 Related Datasheet

2SC3710 NPN Transistor (INCHANGE)

2SC3710 SILICON POWER TRANSISTOR (SavantIC)

2SC3710A Silicon NPN Power Transistor (Inchange Semiconductor)

2SC3714 Silicon NPN Transistor (Inchange Semiconductor)

2SC3719 Power Transistor (Inchange Semiconductor)

2SC3704 Silicon NPN Transistor (Panasonic Semiconductor)

2SC3705 NPN Epitaxial Planar Silicon Darlington Transistor (Sanyo Semicon Device)

2SC3707 Silicon NPN Transistor (Panasonic Semiconductor)

TAGS

2SC3710A 2SC3710A Silicon NPN Transistor Toshiba Semiconductor