2SK246 Datasheet - Toshiba Semiconductor

2SK246 - N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications 2SK246 Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1 nA (max) (VGS = 30 V) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Ra.

2SK246_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK246

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

105.43 KB

Description:

N-channel mosfet.

2SK246 Distributor

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2SK246 N-Channel MOSFET Toshiba Semiconductor