Datasheet4U Logo Datasheet4U.com

2SK246 N-Channel MOSFET

2SK246 Description

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif.

2SK246 Applications

* 2SK246 Unit: mm
* High breakdown voltage: VGDS =
* 50 V
* High input impedance: IGSS =
* 1 nA (max) (VGS =
* 30 V) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symb

📥 Download Datasheet

Preview of 2SK246 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 2SK2461 - N-Channel MOSFET (NEC)
  • 2SK2462 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK2463 - Small switching Transistors (Rohm)
  • 2SK2464 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • 2SK2469-01MR - N-channel MOS-FET (Fuji Electric)
  • 2SK240 - Silicon N-Channel Transistor (Toshiba)
  • 2SK2402 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK2405 - N-Channel Silicon MOSFET (Sanyo Semicon Device)

📌 All Tags

N-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor 2SK246-like datasheet