2SK2467 Datasheet - Toshiba Semiconductor

2SK2467 N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2467 2SK2467 High-Power Amplifier Application High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 4.0 S (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VGSS ID PD Tch Tstg 180 ±20 9 8.

2SK2467_ToshibaSemiconductor.pdf