2SK3476 Datasheet (Toshiba Semiconductor)

2SK3476, N-Channel MOSFET

2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 7.0 W (min) Gain: GP = 11.4dB (min) Drain efficiency: ηD = 60% (min) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 20 ±5 3 20 150 45~150 Unit V V A W °C °C Note