2SK3476 N-Channel MOSFET

Toshiba Semiconductor

Description

2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 7.0 W.

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Datasheet Specifications

Part number: 2SK3476
Manufacturer: Toshiba ↗ Semiconductor
File Size: 120.25 KB
Datasheet: 2SK3476_ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Applications

* Unit: mm Output power: PO = 7.0 W (min) Gain: GP = 11.4dB (min) Drain efficiency: ηD = 60% (min)
* Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID

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2SK3476 N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor 2SK3476-like datasheet