Datasheet4U Logo Datasheet4U.com

B1375 Datasheet - Toshiba Semiconductor

B1375 2SB1375

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A, IB = 0.2 A) High power dissipation: PC = 25 W (Tc = 25°C) Collector metal (fin) is covered with mold resin Complementary to 2SD2012 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Em.

B1375 Datasheet (137.37 KB)

Preview of B1375 PDF
B1375 Datasheet Preview Page 2 B1375 Datasheet Preview Page 3

Datasheet Details

Part number:

B1375

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

137.37 KB

Description:

2sb1375.

📁 Related Datasheet

B1370 PNP Transistor (INCHANGE)

B1370 2SB1370 (ROHM Electronics)

B130 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)

B130 SCHOTTKY BARRIER RECTIFIER (EIC)

B130-E3 Surface Mount Schottky Barrier Rectifier (Vishay)

B130-M3 Surface Mount Schottky Barrier Rectifier (Vishay)

B1301 PNP SIlicon Transistor (Renesas)

B1302 PNP Epitaxial Planar Silicon Transistor (Sanyo)

TAGS

B1375 2SB1375 Toshiba Semiconductor

B1375 Distributor