GT25Q102 Silicon N-Channel IGBT

Toshiba Semiconductor

Description

GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications Unit: mm The 3rd Generation Enha.

📥 Download Datasheet

GT25Q102 Datasheet Preview — Preview of GT25Q102 PDF

Datasheet Specifications

Part number: GT25Q102
Manufacturer: Toshiba ↗ Semiconductor
File Size: 152.55 KB
Datasheet: GT25Q102_ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

Applications

* Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
* Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Ju

GT25Q102 Distributors

📁 Related Datasheet

GT2530 GT2531 GT25C01 GT25C02 GT25C04 GT25C08

📌 All Tags

GT25Q102 Silicon N-Channel IGBT Toshiba Semiconductor

Toshiba Semiconductor GT25Q102-like datasheet