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GT25Q301 Datasheet - Toshiba Semiconductor

GT25Q301 Silicon N-Channel IGBT

GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Motor Control Applications The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFP P.

GT25Q301 Datasheet (169.71 KB)

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Datasheet Details

Part number:

GT25Q301

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

169.71 KB

Description:

Silicon n-channel igbt.

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GT25Q301 Silicon N-Channel IGBT Toshiba Semiconductor

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