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GT25Q301 Silicon N-Channel IGBT

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Description

GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Motor Control Applications *.

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Applications

* Motor Control Applications
* The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-

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GT25Q301 Silicon N-Channel IGBT Toshiba Semiconductor
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