K117 Datasheet - Toshiba Semiconductor

K117 2SK117

2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = 50 V Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ) High input impedance: IGSS = 1 nA (max) (VGS = 30 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current.

K117_ToshibaSemiconductor.pdf