K11A65D - TK11A65D

Product Overview

Toshiba Semiconductor

Part number	K11A65D
Manufacturer	Toshiba Semiconductor
File Size	324.75 KB
Description	TK11A65D
Datasheet	K11A65D Datasheet
Additional preview pages of the K11A65D datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ. ) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK11A65D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source vol.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Feb 8, 2017 |