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K11A65D Datasheet - Toshiba Semiconductor

K11A65D TK11A65D

K11A65D Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK11A65D 1: Gate (G) 2

K11A65D-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K11A65D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

324.75 KB

Description:

Tk11a65d.

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K11A65D K11A65D TK11A65D Toshiba Semiconductor

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