K118 Datasheet - Toshiba Semiconductor

K118 2SK118

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications 2SK118 Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1 nA (max) (VGS = 30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate curren.

K118-ToshibaSemiconductor.pdf