K1120 Datasheet - Toshiba Semiconductor

K1120, 2SK1120

2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSII.5) 2SK1120 DC *DC Converter and Motor Drive Applications z.

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K1120_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K1120

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

410.98 KB

Description:

2SK1120

Applications

* z Low drain
* source ON resistance : RDS (ON) = 1.5 Ω (typ. ) z High forward transfer admittance : |Yfs| = 4.0 S (typ. ) z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Char

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K1120 2SK1120 Toshiba Semiconductor

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