Datasheet Specifications
- Part number
- K13A60D
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 204.15 KB
- Datasheet
- K13A60D_ToshibaSemiconductor.pdf
- Description
- TK13A60D
Description
TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A60D Switching Regulator Applications * * * .
Applications
* Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ. ) High forward transfer admittance: |Yfs| = 6.5 S (typ. ) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (TaK13A60D Distributors
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