K3444 Datasheet - Toshiba Semiconductor

K3444 2SK3444

2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3444 Switching Regulator, DC-DC Converter Applications Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 µA (VDS = 200 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain.

K3444-ToshibaSemiconductor.pdf