K3472 Datasheet - Toshiba Semiconductor

K3472 2SK3472

2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3472 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) G.

K3472-ToshibaSemiconductor.pdf