K3462 Datasheet - Toshiba Semiconductor

K3462 2SK3462

2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) www.DataSheet4U.com 2SK3462 Unit: mm Switching Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 250 V) Enhancement mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C.

K3462_ToshibaSemiconductor.pdf