Datasheet4U Logo Datasheet4U.com

K365 2SK365

K365 Description

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Ap.

K365 Applications

* 2SK365 Unit: mm
* High breakdown voltage: VGDS =
* 50 V
* High input impedance: IGSS =
* 1.0 nA (max) (VGS =
* 30 V)
* Low RDS (ON): RDS (ON) = 80 Ω (typ. ) (IDSS = 5 mA)
* Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate curre

📥 Download Datasheet

Preview of K365 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • K3652 - N-channel enhancement mode MOSFET (Panasonic)
  • K3659 - 2SK3659 (NEC)
  • K360 - Silicon Zener Diodes (Aeroflex)
  • K3601G - Multipulse SIDACs (Littelfuse)
  • K3601GL - Standard Bidirectional SIDAC (Littelfuse)
  • K3603-01MR - 2SK3603-01MR (Fuji Electric)
  • K3607-01MR - 2SK3607-01MR (Fuji)
  • K3610 - Photocoupler (KODENSHI KOREA CORP)

📌 All Tags

2SK365 Toshiba Semiconductor
Toshiba Semiconductor K365-like datasheet