K365 Datasheet - Toshiba Semiconductor

K365 2SK365

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK365 Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 80 Ω (typ.) (IDSS = 5 mA) Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction tem.

K365 Datasheet (178.72 KB)