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K365 2SK365

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Description

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Ap.

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Applications

* 2SK365 Unit: mm
* High breakdown voltage: VGDS =
* 50 V
* High input impedance: IGSS =
* 1.0 nA (max) (VGS =
* 30 V)
* Low RDS (ON): RDS (ON) = 80 Ω (typ. ) (IDSS = 5 mA)
* Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate curre

K365 Distributors

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K3652 K3659 K360 K3601G K3601GL K3603-01MR

📌 All Tags

K365 2SK365 Toshiba Semiconductor
Toshiba Semiconductor K365-like datasheet
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