Datasheet4U Logo Datasheet4U.com

K3667 2SK3667

K3667 Description

2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regulator Applications * * * <.

K3667 Applications

* Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ. ) High forward transfer admittance: |Yfs| = 5.5S (typ. ) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm www. DataSheet4U. com Absolute Maxi

📥 Download Datasheet

Preview of K3667 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • K3665 - 2SK3665 (Panasonic)
  • K360 - Silicon Zener Diodes (Aeroflex)
  • K3601G - Multipulse SIDACs (Littelfuse)
  • K3601GL - Standard Bidirectional SIDAC (Littelfuse)
  • K3603-01MR - 2SK3603-01MR (Fuji Electric)
  • K3607-01MR - 2SK3607-01MR (Fuji)
  • K3610 - Photocoupler (KODENSHI KOREA CORP)
  • K3611 - Photocoupler (KODENSHI KOREA CORP)

📌 All Tags

2SK3667 Toshiba Semiconductor
Toshiba Semiconductor K3667-like datasheet