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K3667 2SK3667

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Description

2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regulator Applications * * * <.

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Applications

* Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ. ) High forward transfer admittance: |Yfs| = 5.5S (typ. ) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm www. DataSheet4U. com Absolute Maxi

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