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K3669 2SK3669

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Description

2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII) 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applicati.

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Applications

* Unit: mm
* Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ. )
* High forward transfer admittance: |Yfs| = 6 S (typ. )
* Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) www. DataSheet
* 4U. cEonmhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absol

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K3669 2SK3669 Toshiba Semiconductor
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