K3670 Datasheet (Toshiba Semiconductor) - Silicon N-Channel MOS Type Field Effect Transistor

K3670, Silicon N-Channel MOS Type Field Effect Transistor

2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3670 Chopper Regulator and DC DC Converter Applications Unit: mm z 2.5V-Gate Drive z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.1 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 150 V) z Enhancement mode: Vth = 0.5 to 1.3 V (VDS = 10 V, ID =200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain