K3670 Silicon N-Channel MOS Type Field Effect Transistor

Toshiba Semiconductor

Description

2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK3670 Chopper Regulator and DC *DC Converter Application.

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Datasheet Specifications

Part number: K3670
Manufacturer: Toshiba ↗ Semiconductor
File Size: 164.41 KB
Datasheet: K3670-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOS Type Field Effect Transistor

Applications

* Unit: mm z 2.5V-Gate Drive z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ. ) z High forward transfer admittance: |Yfs| = 2.1 S (typ. ) z Low leakage current: IDSS = 100 μA (max) (VDS = 150 V) z Enhancement mode: Vth = 0.5 to 1.3 V (VDS = 10 V, ID =200 μA) Absolute Maximum Ratings (Ta = 25°

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K3670 Silicon N-Channel MOS Type Field Effect Transistor Toshiba Semiconductor

Toshiba Semiconductor K3670-like datasheet