K368 Datasheet - Toshiba Semiconductor

K368 2SK368

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications 2SK368 Unit: mm High breakdown voltage: VGDS = 100 V (min) High input impedance: IGSS = 1.0 nA (max) (VGS = 80 V) Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD .

K368-ToshibaSemiconductor.pdf