* Low Noise Figure :NF=1.4dB (@f=2GHz) High Gain:|S21e| =13.0dB (@f=2GHz) 2 Marking 3 Q2 1 2 TESM JEDEC ― ― 2-1B1A Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipatio
MT3S35T
Toshiba ↗ Semiconductor
149.39 KB
Cmos st-bus family multiple rate digital switch.
www.DataSheet4U.com MT3S35T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S35T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Un.
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