* Low Noise Figure :NF=1.3dB (@f=2GHz) High Gain:|S21e| =12.5dB (@f=2GHz) 2 Marking 3 Q3 1 2 TESM JEDEC ― ― 2-1B1A Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation
MT3S36T
Toshiba ↗ Semiconductor
148.17 KB
Transistor silicon npn epitaxial planer type.
www.DataSheet4U.com MT3S36T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S36T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Un.
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