MT3S36T Datasheet - Toshiba Semiconductor

MT3S36T, TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE

www.DataSheet4U.com MT3S36T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S36T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Un.

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MT3S36T_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MT3S36T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

148.17 KB

Description:

TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE

Features

* Low Noise Figure :NF=1.3dB (@f=2GHz) High Gain:|S21e| =12.5dB (@f=2GHz) 2 Marking 3 Q3 1 2 TESM JEDEC ― ― 2-1B1A Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation

Applications

* (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which m

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MT3S36T TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE Toshiba Semiconductor

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