Datasheet Specifications
- Part number
- MT3S36T
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 148.17 KB
- Datasheet
- MT3S36T_ToshibaSemiconductor.pdf
- Description
- TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
Description
www.DataSheet4U.com MT3S36T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S36T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Un.
Features
* Low Noise Figure :NF=1.3dB (@f=2GHz) High Gain:|S21e| =12.5dB (@f=2GHz) 2 Marking 3 Q3 1 2 TESM JEDEC ― ― 2-1B1A Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipationApplications
* (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which mMT3S36T Distributors
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