Datasheet Specifications
- Part number
- MT3S38T
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 149.45 KB
- Datasheet
- MT3S38T_ToshibaSemiconductor.pdf
- Description
- TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
Description
www.DataSheet4U.com MT3S38T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S38T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Un.
Features
* Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =11dB (@f=2GHz) 2 Marking 3 Q5 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperApplications
* (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which mMT3S38T Distributors
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