MT3S38T Datasheet - Toshiba Semiconductor

MT3S38T, TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE

www.DataSheet4U.com MT3S38T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S38T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Un.

Features

* Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =11dB (@f=2GHz) 2 Marking 3 Q5 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temper

Applications

* (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which m

MT3S38T_ToshibaSemiconductor.pdf