SSM3J16TE Datasheet (Toshiba Semiconductor) - Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J16TE, Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J16TE www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : Ron = 8 Ω (max) (@VGS = 4 V) : Ron = 12 Ω (max) (@VGS = 2.5 V) : Ron = 45 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Ts