SSM3J16TE Field-Effect Transistor Silicon P-Channel MOS Type

Toshiba Semiconductor

Description

SSM3J16TE www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch .

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Datasheet Specifications

Part number: SSM3J16TE
Manufacturer: Toshiba ↗ Semiconductor
File Size: 212.64 KB
Datasheet: SSM3J16TE_ToshibaSemiconductor.pdf
Description: Field-Effect Transistor Silicon P-Channel MOS Type

Applications

* Analog Switch Applications Unit: mm
* Small package Low on-resistance : Ron = 8 Ω (max) (@VGS =
* 4 V) : Ron = 12 Ω (max) (@VGS =
* 2.5 V) : Ron = 45 Ω (max) (@VGS =
* 1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source

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SSM3J16TE Field-Effect Transistor Silicon P-Channel MOS Type Toshiba Semiconductor

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