Datasheet Specifications
- Part number
- SSM3K12T
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 178.15 KB
- Datasheet
- SSM3K12T_ToshibaSemiconductor.pdf
- Description
- CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category
Description
SSM3K12T CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category SSM3K12T DC-DC Converter High Speed Switching Applications *.
Applications
* Small Package Low ON-resistance High speed Unit: mm : Ron = 95 mΩ (max) (@VGS = 10 V) : Ron = 145 mΩ (max) (@VGS = 4.5 V) : ton = 21 ns : toff = 16 ns Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDPSSM3K12T Distributors
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