SSM3K16CTC - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 5.6 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.0 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.0 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.2 Ω (max) (@VGS = 4.5 V) 3. Packaging and Pin Assignment SSM3K16CTC CST3C ©2016-2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-12 2017-11-30 Rev.2.0 SSM3K16CTC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbo.

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Published: Dec 14, 2023 |