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SSM3K337R - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	SSM3K337R
Manufacturer	Toshiba ↗
File Size	259.92 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K337R-Toshiba.pdf

SSM3K337R Product details

Features

(1) AEC-Q101 Qualified (Note1). (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 200 mΩ (max) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 176 mΩ (max) (@VGS = 4.5 V, ID = 2.0 A) RDS(ON) = 150 mΩ (max) (@VGS = 10 V, ID = 2.0 A) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment SOT-23F SSM3K337R 1: Gate 2: Source 3: Drain ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2013-12 2021-01-.

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Published: Nov 11, 2019 |