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SSM3K337R Datasheet - Toshiba

SSM3K337R Silicon N-Channel MOSFET

SSM3K337R Features

* (1) AEC-Q101 Qualified (Note1). (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 200 mΩ (max) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 176 mΩ (max) (@VGS = 4.5 V, ID = 2.0 A) RDS(ON) = 150 mΩ (max) (@VGS = 10 V, ID = 2.0 A) Note 1: For detail information, please contact to ou

SSM3K337R Datasheet (259.92 KB)

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Datasheet Details

Part number:

SSM3K337R

Manufacturer:

Toshiba ↗

File Size:

259.92 KB

Description:

Silicon n-channel mosfet.

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SSM3K337R Silicon N-Channel MOSFET Toshiba

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