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SSM3K336R

Silicon N-Channel MOSFET

SSM3K336R Features

* (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3K336R 1. Gate 2. Source 3. Drain ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of comm

SSM3K336R Datasheet (362.06 KB)

Preview of SSM3K336R PDF

Datasheet Details

Part number:

SSM3K336R

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

362.06 KB

Description:

Silicon n-channel mosfet.

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TAGS

SSM3K336R Silicon N-Channel MOSFET Toshiba Semiconductor

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