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SSM3K302T Datasheet - Toshiba Semiconductor

SSM3K302T Power Management Switch Applications

SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 131 mΩ (max) (@VGS = 1.8V) Ron = Ron = 87mΩ (max) (@VGS = 2.5V) 71 mΩ (max) (@VGS = 4.0V) Unit: mm Absolute www.DataSheet4U.com Maximum Ratings (Ta = 25°C) Characteristic Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 30 ± 12 3.0 6.0 700 150 55~150 Unit V V .

SSM3K302T Datasheet (203.61 KB)

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Datasheet Details

Part number:

SSM3K302T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

203.61 KB

Description:

Power management switch applications.

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SSM3K302T Power Management Switch Applications Toshiba Semiconductor

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