SSM3K316T Datasheet - Toshiba Semiconductor

SSM3K316T MOSFET

SSM3K316T www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications 1.8-V drive Low ON-resistance: Ron = 131 mΩ (max) (@VGS = 1.8 V) Ron = 87 mΩ (max) (@VGS = 2.5 V) Ron = 65 mΩ (max) (@VGS = 4.5 V) Ron = 53 mΩ (max) (@VGS = 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Gate source voltage Drain current Drain power .

SSM3K316T Features

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SSM3K316T_ToshibaSemiconductor.pdf