SSM3K316T Datasheet - Toshiba Semiconductor

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SSM3K316T MOSFET

SSM3K316T www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Sw.

SSM3K316T_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3K316T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

200.17 KB

Description:

MOSFET

Features

* ws or regulations.
* The information contained herein is presented only as guidance for Product use. No responsibility is assumed b

Applications

* High-Speed Switching Applications
* 1.8-V drive Low ON-resistance: Ron = 131 mΩ (max) (@VGS = 1.8 V) Ron = 87 mΩ (max) (@VGS = 2.5 V) Ron = 65 mΩ (max) (@VGS = 4.5 V) Ron = 53 mΩ (max) (@VGS = 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain
* source

SSM3K316T Distributors

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SSM3K316T MOSFET Toshiba Semiconductor

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