SSM3K315T Datasheet - Toshiba Semiconductor

SSM3K315T Silicon N-Channel MOSFET

SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K315T ○ High-Speed Switching Applications 4.5-V drive Low ON-resistance : Ron = 41.5 mΩ (max) (@VGS = 4.5 V) : Ron = 27.6 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 0～0.1 0.15 0.16±0.05 Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V Drain current DC ID (Note 1) 6.0.

SSM3K315T Datasheet (248.83 KB)