SSM3K318T Datasheet - Toshiba Semiconductor

SSM3K318T Silicon N-Channel MOSFET

SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applications 4.5 V drive Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 0～0.1 0.15 0.16±0.05 2.9±0.2 1.9±0.2 0.95 0.95 Absolute Maximum Ratings (Ta = 25°C) １ Characteristic Symbol Rating Unit ２３ Drain-Source voltage VDSS 60 V.

SSM3K318T_ToshibaSemiconductor.pdf