SSM3K318T Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applic.

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Datasheet Specifications

Part number: SSM3K318T
Manufacturer: Toshiba ↗ Semiconductor
File Size: 266.98 KB
Datasheet: SSM3K318T_ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Applications

* ○ High-Speed Switching Applications
* 4.5 V drive
* Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 0～0.1 0.15 0.16±0.05 2.9±0.2 1.9±0.2 0.95 0.95 Absolute Maximum Ratings (Ta = 25°C) １

SSM3K318T Distributors

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SSM3K318T Silicon N-Channel MOSFET Toshiba Semiconductor

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