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SSM3K320T Silicon N-Channel MOSFET

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Description

SSM3K320T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K320T High-Speed Switching Applications * 4.5 V drive

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Applications

* 4.5 V drive
* Low ON-resistance : Ron = 77 mΩ (max) (@VGS = 4.5 V) : Ron = 50 mΩ (max) (@VGS = 10 V) Unit: mm +0.2 2.8-0.3 +0.2 1.6-0.1 0.4±0.1 0~0.1 0.15 0.16±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V G

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