SSM3K320T Datasheet (Toshiba) - Silicon N-Channel MOSFET

SSM3K320T, Silicon N-Channel MOSFET

SSM3K320T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K320T High-Speed Switching Applications 4.5 V drive Low ON-resistance : Ron = 77 mΩ (max) (@VGS = 4.5 V) : Ron = 50 mΩ (max) (@VGS = 10 V) Unit: mm +0.2 2.8-0.3 +0.2 1.6-0.1 0.4±0.1 0～0.1 0.15 0.16±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V Drain current DC ID (Note1) 4.2 A Pu