SSM3K329R Datasheet, Mosfet, Toshiba Semiconductor

SSM3K329R Features

• Mosfet (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V) 3. P

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Part number:

SSM3K329R

Manufacturer:

Toshiba ↗ Semiconductor

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410.10kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

SSM3K329R Application

• Applications
• Power Management Switches
• High-Speed Switching 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-re

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SSM3K329R

Toshiba Semiconductor

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