Part number:
SSM3K329R
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
410.10 KB
Description:
Silicon n-channel mosfet.
SSM3K329R Datasheet (410.10 KB)
Datasheet Details
SSM3K329R Features
* (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit SOT-23F SSM3K329R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices &
SSM3K329R Datasheet (410.10 KB)
Datasheet Details
SSM3K329R
Toshiba ↗ Semiconductor
410.10 KB
Silicon n-channel mosfet.
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SSM3K329R Distributor
