SSM3K329R - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM3K329R
Manufacturer	Toshiba ↗ Semiconductor
File Size	410.10 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K329R-ToshibaSemiconductor.pdf

(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit SOT-23F SSM3K329R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-02 2021-10-22 Rev.1.0 SSM3K329R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rat.

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Published: Sep 18, 2014 |