Part number:
SSM3K329R
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
410.10 KB
Description:
Silicon n-channel mosfet.
SSM3K329R Datasheet (410.10 KB)
* (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit SOT-23F SSM3K329R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices &
SSM3K329R Datasheet (410.10 KB)
SSM3K329R
Toshiba ↗ Semiconductor
410.10 KB
Silicon n-channel mosfet.
📁 Related Datasheet
SSM3K320T Silicon N-Channel MOSFET (Toshiba)
SSM3K324R Silicon N-Channel MOSFET (Toshiba Semiconductor)
SSM3K301T Silicon N-Channel MOSFET (Toshiba Semiconductor)
SSM3K302T Power Management Switch Applications (Toshiba Semiconductor)
SSM3K303T Silicon N-Channel MOSFET (Toshiba Semiconductor)
SSM3K309T Silicon N-Channel MOSFET (Toshiba Semiconductor)
SSM3K310T Silicon N-Channel MOSFET (Toshiba Semiconductor)
SSM3K315T Silicon N-Channel MOSFET (Toshiba Semiconductor)
SSM3K316T MOSFET (Toshiba Semiconductor)
SSM3K318R Silicon N-Channel MOSFET (Toshiba)
